According to one embodiment, a semiconductor memory device includes: a substrate; a plurality of wiring layers stacked via a plurality of insulating layers above the substrate, the wiring layers having an opening extending in a direction perpendicular to the substrate, each of the wiring layers including a first face recessed in a first direction, a second face recessed in a second direction, third face recessed in a third direction, and a fourth face recessed in a fourth direction; a block insulating film provided to be in contact with each of the first to fourth faces; a charge storage film provided on a side face of the block insulating film; a tunnel insulating film provided on a side face of the charge storage film; and a semiconductor film provided on a side face of the tunnel insulating film.