Invention Grant
- Patent Title: Semiconductor memory device
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Application No.: US16829918Application Date: 2020-03-25
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Publication No.: US10971487B2Publication Date: 2021-04-06
- Inventor: Sung-Lae Oh , Dong-Hyuk Kim , Soo-Nam Jung
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2018-0060086 20180528
- Main IPC: G11C8/00
- IPC: G11C8/00 ; H01L25/18 ; H01L27/11556 ; H01L27/11526 ; H01L23/00 ; G11C16/08 ; H01L27/11582 ; G11C16/04 ; H01L27/11548 ; H01L27/11575 ; H01L27/11573

Abstract:
A semiconductor memory device includes a cell wafer including a first plane and a second plane which are disposed to be adjacent to each other in a first direction and each include a plurality of memory cells; and a peripheral wafer including a row decoder which simultaneously controls the first and second planes and first and second page buffer circuits which control the first and second planes, respectively. The cell wafer includes, on one surface thereof bonded to the peripheral wafer, a first pad which is coupled in common with the first plane and the second plane, and the peripheral wafer includes, on one surface thereof bonded to the cell wafer, a second pad which is coupled with the row decoder and is bonded to the first pad.
Public/Granted literature
- US20200227398A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2020-07-16
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