Invention Grant
- Patent Title: Semiconductor device
-
Application No.: US16285855Application Date: 2019-02-26
-
Publication No.: US10971473B2Publication Date: 2021-04-06
- Inventor: Yoshiyuki Kosaka
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Minato-ku
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPJP2018-163200 20180831
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L23/31 ; H01L25/18 ; H01L23/00 ; H01L23/29 ; H01L23/538

Abstract:
According to one embodiment, a semiconductor device includes a substrate, first stacked components, second stacked components, and a coating resin. The first stacked components include first chips and are stacked on a surface of the substrate. The second stacked components include second chips and are stacked on the surface. The coating resin covers the surface, the first stacked components, and the second stacked components. A first top surface of a second farthest one of the first chips away from the surface differs in position in a first direction from a second top surface of second farthest one of the second chips away from the surface.
Public/Granted literature
- US20200075543A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-03-05
Information query
IPC分类: