Invention Grant
- Patent Title: Semiconductor device and method of manufacture
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Application No.: US16458374Application Date: 2019-07-01
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Publication No.: US10971446B2Publication Date: 2021-04-06
- Inventor: Jiun Yi Wu , Chen-Hua Yu , Chien-Hsun Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L25/16 ; H01L23/528 ; H01L23/00 ; H01L23/48 ; H01L21/768

Abstract:
A method includes forming a redistribution structure on a carrier, attaching an integrated passive device on a first side of the redistribution structure, attaching an interconnect structure to the first side of the redistribution structure, the integrated passive device interposed between the redistribution structure and the interconnect structure, depositing an underfill material between the interconnect structure and the redistribution structure, and attaching a semiconductor device on a second side of the redistribution structure that is opposite the first side of the redistribution structure.
Public/Granted literature
- US20200176378A1 Semiconductor Device and Method of Manufacture Public/Granted day:2020-06-04
Information query
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