• Patent Title: Metal-insulator-metal (MIM) structure supporting high voltage applications and low voltage applications
  • Application No.: US16649081
    Application Date: 2017-12-27
  • Publication No.: US10971393B2
    Publication Date: 2021-04-06
  • Inventor: Kevin Lin
  • Applicant: Intel Corporation
  • Applicant Address: US CA Santa Clara
  • Assignee: Intel Corporation
  • Current Assignee: Intel Corporation
  • Current Assignee Address: US CA Santa Clara
  • Agency: Green, Howard & Mughal LLP
  • International Application: PCT/US2017/068551 WO 20171227
  • International Announcement: WO2019/132885 WO 20190704
  • Main IPC: H01L21/768
  • IPC: H01L21/768 H01L23/522
Metal-insulator-metal (MIM) structure supporting high voltage applications and low voltage applications
Abstract:
An apparatus is provided which includes: a first stack including a lower, a middle, and an upper layer of conductive material with insulator layers therebetween, and a second stack including the middle and upper layers with one of the insulator layers therebetween. In an example, a first of the insulator layers has a lower breakdown voltage than a second of the insulator layers. The apparatus further includes a first via over the first stack, wherein the first via is in contact with a pair of the lower, middle and upper layers that have the first of the insulator layers therebetween. The apparatus further includes a second via over the second stack, wherein the second via extends through the upper layer and is in contact with the middle layer. In an example, the second via is isolated from a sidewall of the upper layer by a spacer.
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