Invention Grant
- Patent Title: Semi-insulating compound semiconductor substrate and semi-insulating compound semiconductor single crystal
-
Application No.: US16478626Application Date: 2017-09-21
-
Publication No.: US10971374B2Publication Date: 2021-04-06
- Inventor: Katsushi Hashio , Kazuaki Konoike , Takuya Yanagisawa
- Applicant: Sumitomo Electric Industries, Ltd.
- Applicant Address: JP Osaka
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka
- Agency: Faegre Drinker Biddle & Reath LLP
- International Application: PCT/JP2017/034098 WO 20170921
- International Announcement: WO2019/058484 WO 20190328
- Main IPC: H01L21/324
- IPC: H01L21/324 ; C30B29/06 ; C30B29/42 ; C30B33/02 ; G01R31/26 ; H01L21/8252

Abstract:
A semi-insulating compound semiconductor substrate includes a semi-insulating compound semiconductor, the semi-insulating compound semiconductor substrate being configured such that, on a major plane having a plane orientation of (100), a standard deviation/average value of specific resistance measured at intervals of 0.1 mm along equivalent four directions in a direction from a center of the major plane, and a standard deviation/average value of specific resistance measured at intervals of 0.1 mm along equivalent four directions in a direction from the center of the major plane are each not more than 0.1.
Information query
IPC分类: