Invention Grant
- Patent Title: Substrates and methods for forming the same
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Application No.: US16690408Application Date: 2019-11-21
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Publication No.: US10971355B2Publication Date: 2021-04-06
- Inventor: Kwang-Ming Lin , Yung-Fong Lin
- Applicant: Vanguard International Semiconductor Corporation
- Applicant Address: TW Hsinchu
- Assignee: Vanguard International Semiconductor Corporation
- Current Assignee: Vanguard International Semiconductor Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch LLP
- Priority: TW108115312 20190503
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/205

Abstract:
A substrate includes a ceramic core, a first adhesion layer, a barrier layer, and a second adhesion layer. The first adhesion layer encapsulates the ceramic core and includes silicon oxynitride, wherein the atomic number ratio of oxygen to nitrogen in silicon oxynitride of the first adhesion layer has a first ratio. The barrier layer encapsulates the first adhesion layer and includes silicon oxynitride, wherein the atomic number ratio of oxygen to nitrogen in silicon oxynitride of the barrier layer has a second ratio that is different from the first ratio. The second adhesion layer encapsulates the barrier layer and includes silicon oxynitride, wherein the atomic number ratio of oxygen to nitrogen in silicon oxynitride of the second adhesion layer has a third ratio that is different from the second ratio.
Public/Granted literature
- US20200350410A1 SUBSTRATES AND METHODS FOR FORMING THE SAME Public/Granted day:2020-11-05
Information query
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