Invention Grant
- Patent Title: Systems and methods for gated-insulator reconfigurable non-volatile memory devices
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Application No.: US16367632Application Date: 2019-03-28
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Publication No.: US10944053B2Publication Date: 2021-03-09
- Inventor: Rashmi Jha , Andrew Rush , Eric Herrmann
- Applicant: University of Cincinnati
- Applicant Address: US OH Cincinnati
- Assignee: University of Cincinnati
- Current Assignee: University of Cincinnati
- Current Assignee Address: US OH Cincinnati
- Agency: Dinsmore & Shohl, LLP
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24 ; G11C13/00 ; G11C11/54
Abstract:
Systems and methods of use and fabrication are described for a non-volatile resistive random access memory (RRAM) multi-terminal device including a first electrode, a second electrode, a metal oxide disposed between the first electrode and the second electrode, and an at least first gate configured to apply a voltage bias to change a resistive state in the metal oxide.
Public/Granted literature
- US20190305046A1 SYSTEMS AND METHODS FOR GATED-INSULATOR RECONFIGURABLE NON-VOLATILE MEMORY DEVICES Public/Granted day:2019-10-03
Information query
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