Invention Grant
- Patent Title: MTJ device performance by controlling device shape
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Application No.: US15810494Application Date: 2017-11-13
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Publication No.: US10944049B2Publication Date: 2021-03-09
- Inventor: Jesmin Haq , Tom Zhong , Zhongjian Teng , Vinh Lam , Yi Yang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L43/12
- IPC: H01L43/12 ; H01F10/06 ; H01F10/16 ; H01L43/02 ; H01L43/08 ; H01L43/10

Abstract:
A layered thin film device, such as a MTJ (Magnetic Tunnel Junction) device can be customized in shape by sequentially forming its successive layers over a symmetrically curved electrode. By initially shaping the electrode to have a concave or convex surface, the sequentially formed layers conform to that shape and acquire it and are subject to stresses that cause various crystal defects to migrate away from the axis of symmetry, leaving the region immediately surrounding the axis of symmetry relatively defect free. The resulting stack can then be patterned to leave only the region that is relatively defect free.
Public/Granted literature
- US20190148630A1 MTJ Device Performance by Controlling Device Shape Public/Granted day:2019-05-16
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