Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16694513Application Date: 2019-11-25
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Publication No.: US10944046B2Publication Date: 2021-03-09
- Inventor: Yuya Hasegawa , Satohiro Kigoshi
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: JPJP2017-169389 20170904,JPJP2018-134794 20180718
- Main IPC: H01L43/04
- IPC: H01L43/04 ; H01L23/544 ; H01L23/495 ; G01R33/07 ; H01L21/48 ; H01L21/56 ; H01L21/683 ; H01L23/31 ; H01L23/00 ; H01L43/06 ; H01L43/14

Abstract:
A semiconductor device includes a semiconductor element, a conductive layer, terminals, and a sealing resin. The conductive layer, containing metal particles, is in contact with the reverse surface and the side surface of the semiconductor element. The terminals are spaced apart from and electrically connected to the semiconductor element. The sealing resin covers the semiconductor element. The conductive layer has an edge located outside of the semiconductor element as viewed in plan. Each terminal includes a top surface, a bottom surface, an inner side surface held in contact with the sealing resin, and the terminal is formed with a dent portion recessed from the bottom surface and the inner side surface. The conductive layer and the bottom surface of each terminal are exposed from a bottom surface of the sealing resin.
Public/Granted literature
- US20200091416A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-03-19
Information query
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