Invention Grant
- Patent Title: Thin film transistor and manufacturing method thereof, display substrate and manufacturing method thereof, and display device
-
Application No.: US16326257Application Date: 2018-04-18
-
Publication No.: US10943984B2Publication Date: 2021-03-09
- Inventor: Wei Liu
- Applicant: BOE Technology Group Co., Ltd.
- Applicant Address: CN Beijing
- Assignee: BOE Technology Group Co., Ltd.
- Current Assignee: BOE Technology Group Co., Ltd.
- Current Assignee Address: CN Beijing
- Agency: Westman, Champlin & Koehler, P.A.
- Priority: CN201710778593.8 20170831
- International Application: PCT/CN2018/083535 WO 20180418
- International Announcement: WO2019/041829 WO 20190307
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L27/32 ; H01L29/49 ; H01L29/66

Abstract:
The present disclosure provides a thin film transistor and a manufacturing method thereof, a display substrate and a manufacturing method thereof, and a display device. The thin film transistor of the embodiments of the present disclosure comprises an active layer pattern disposed on a base substrate, a gate electrode insulating pattern disposed on the active layer pattern, and a gate electrode disposed on the gate electrode insulating pattern, wherein a conductive pattern is disposed between the gate electrode and the gate electrode insulating pattern, the conductive pattern being electrically connected to the gate electrode, and an orthographic projection of the conductive pattern on the base substrate being overlapped with an orthographic projection of the gate electrode insulating pattern on the base substrate.
Information query
IPC分类: