Invention Grant
- Patent Title: GAA FET with U-shaped channel
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Application No.: US16710352Application Date: 2019-12-11
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Publication No.: US10943977B2Publication Date: 2021-03-09
- Inventor: Jie-Cheng Deng , Yi-Jen Chen , Chia-Yang Liao
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/423 ; H01L29/51 ; H01L29/66 ; H01L29/49 ; H01L29/06 ; H01L29/775 ; B82Y10/00 ; H01L29/786
Abstract:
A semiconductor device is disclosed. The semiconductor device includes a channel region, extending along a direction, that has a U-shaped cross-section; a gate dielectric layer wrapping around the channel region; and a gate electrode wrapping around respective central portions of the gate dielectric layer and the channel region.
Information query
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