Invention Grant
- Patent Title: Spin orbit torque magnetic random access memory structures and methods for fabrication
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Application No.: US16374410Application Date: 2019-04-03
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Publication No.: US10943951B2Publication Date: 2021-03-09
- Inventor: Jingsheng Chen , Jinyu Deng , Liang Liu
- Applicant: National University of Singapore
- Applicant Address: SG Singapore
- Assignee: National University of Singapore
- Current Assignee: National University of Singapore
- Current Assignee Address: SG Singapore
- Agency: Cesari and McKenna, LLP
- Agent James A. Blanchette
- Priority: SG10201802787T 20180403
- Main IPC: H01L43/06
- IPC: H01L43/06 ; H01L27/22 ; G11C11/16 ; H01L43/10 ; H01L43/08 ; H01L43/14
Abstract:
In one example embodiment, a SOT-MRAM includes a storage unit having a CoαXβPtγ based free layer. The storage unit includes a bottom electrode and the CoαXβPtγ based free layer is disposed over the bottom electrode. Further, the storage unit includes a tunnel barrier layer over the CoαXβPtγ based free layer, and a fixed layer over the tunnel barrier layer. The CoαXβPtγ based free layer, tunnel barrier layer and fixed layer form a magnetic tunnel junction. The storage unit may also include a top electrode over the MTJ.
Public/Granted literature
- US20190305042A1 SPIN ORBIT TORQUE MAGNETIC RANDOM ACCESS MEMORY STRUCTURES AND METHODS FOR FABRICATION Public/Granted day:2019-10-03
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