Invention Grant
- Patent Title: Method of forming FinFET channel and structures thereof
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Application No.: US16518228Application Date: 2019-07-22
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Publication No.: US10943925B2Publication Date: 2021-03-09
- Inventor: Chih-Hao Wang , Ching-Wei Tsai , Kuo-Cheng Ching , Jhon Jhy Liaw , Wai-Yi Lien
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L21/84 ; H01L21/02 ; H01L29/10 ; H01L23/544 ; H01L21/762 ; H01L21/8234 ; H01L29/66
Abstract:
A method for fabricating a semiconductor device having a substantially undoped channel region includes performing an ion implantation into a substrate, depositing a first epitaxial layer over the substrate, and depositing a second epitaxial layer over the first epitaxial layer. In various examples, a plurality of fins is formed extending from the substrate. Each of the plurality of fins includes a portion of the ion implanted substrate, a portion of the first epitaxial layer, and a portion of the second epitaxial layer. In some embodiments, the portion of the second epitaxial layer of each of the plurality of fins includes an undoped channel region. In various embodiments, the portion of the first epitaxial layer of each of the plurality of fins is oxidized.
Public/Granted literature
- US20190341403A1 METHOD OF FORMING FINFET CHANNEL AND STRUCTURES THEREOF Public/Granted day:2019-11-07
Information query
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