Invention Grant
- Patent Title: Substrate with multi-layer resin structure and semiconductor device including the substrate
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Application No.: US16051878Application Date: 2018-08-01
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Publication No.: US10943857B2Publication Date: 2021-03-09
- Inventor: Kentaro Kaneko , Harunobu Sato , Tsukasa Nakanishi , Junichi Nakamura , Koji Watanabe
- Applicant: SHINKO ELECTRIC INDUSTRIES CO., LTD.
- Applicant Address: JP Nagano
- Assignee: SHINKO ELECTRIC INDUSTRIES CO., LTD.
- Current Assignee: SHINKO ELECTRIC INDUSTRIES CO., LTD.
- Current Assignee Address: JP Nagano
- Agency: IPUSA, PLLC
- Priority: JPJP2017-180608 20170920
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L21/48 ; H01L23/00 ; H01L21/683 ; H01L23/31

Abstract:
A substrate for semiconductor elements includes a terminal part including a first surface, a second surface opposite to the first surface, and side surfaces joining the first surface and the second surface, and a resin part covering the side surfaces and exposing the first surface of the terminal part. The resin part has a multi-layer structure including a first resin and a second resin, and the first resin is provided in contact with the side surfaces of the terminal part. The first resin and the second resin include a filler, and an amount of the filler included in the first resin is smaller than an amount of the filler included in the second resin.
Public/Granted literature
- US20190088578A1 SUBSTRATE FOR SEMICONDUCTOR ELEMENTS AND SEMICONDUCTOR DEVICE Public/Granted day:2019-03-21
Information query
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