Semiconductor device with fin structures

Invention Grant

US10943827B2 Semiconductor device with fin structures 有权

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Patent Title: Semiconductor device with fin structures
Application No.: US16867754

Application Date: 2020-05-06
Publication No.: US10943827B2

Publication Date: 2021-03-09
Inventor: Wen-Chun Keng , Yu-Kuan Lin , Chang-Ta Yang , Ping-Wei Wang
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Applicant Address: TW Hsinchu
Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
Current Assignee Address: TW Hsinchu
Agency: Birch, Stewart, Kolasch & Birch, LLP
Main IPC: H01L21/8234
IPC: H01L21/8234 ; H01L27/088 ; H01L29/08 ; H01L21/311 ; H01L21/3065

Semiconductor device with fin structures

Abstract:

A semiconductor device structure is provided. The semiconductor device structure includes a first fin structure and a second fin structure over a semiconductor substrate. A top surface of the first fin structure is closer to the semiconductor substrate than a top surface of the second fin structure. The semiconductor device structure also includes a first epitaxial structure on the first fin structure. The semiconductor device structure further includes a second epitaxial structure on the third fin structure. The first epitaxial structure is wider than the second epitaxial structure.

Public/Granted literature

US20200266108A1 SEMICONDUCTOR DEVICE WITH FIN STRUCTURES Public/Granted day:2020-08-20

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺