A semiconductor device assembly includes: a semiconductor device; a heat exchanger; and a thermal interface material. In embodiments, the thermal interface material may contact a facing surface of the heat exchanger, the thermal interface material includes alloys that react with a bond enhancing agent to form an indium alloy layer in a portion of the thermal interface. In embodiments, a solid, solder preformed thermal interface material includes an indium metal and may be disposed on the first surface of the semiconductor device; and a liquid metal bond enhancing agent may be disposed on a first surface of the semiconductor device; and contacting a facing surface of the heat exchanger.