Invention Grant
- Patent Title: Pattern formation method and method for manufacturing a semiconductor device
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Application No.: US16428029Application Date: 2019-05-31
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Publication No.: US10943791B2Publication Date: 2021-03-09
- Inventor: Yi-Chang Lee , Jiann-Horng Lin , Chih-Hao Chen , Ying-Hao Wu , Wen-Yen Chen , Shih-Hua Tseng , Shu-Huei Suen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/027 ; H01L21/02
Abstract:
In a pattern formation method, a photo resist pattern is formed over a target layer to be patterned. An extension material layer is formed on the photo resist pattern. The target layer is patterned by using at least the extension material layer as an etching mask.
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