Invention Grant
- Patent Title: Semiconductor devices and methods for manufacturing the same
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Application No.: US16391006Application Date: 2019-04-22
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Publication No.: US10943790B2Publication Date: 2021-03-09
- Inventor: Chun Hsiung Tsai , Tsz-Mei Kwok
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01L21/311 ; H01L29/06 ; H01L29/36 ; H01L21/02 ; H01L29/08 ; H01L29/34
Abstract:
Semiconductor devices and methods for manufacturing the same are disclosed. In an embodiment, a method of manufacturing a semiconductor device may include providing a substrate having a recess; epitaxially forming a first layer including a doped semiconductor material within the recess; and epitaxially forming a second layer including an undoped semiconductor material over at least a portion of the recess.
Public/Granted literature
- US20190252201A1 Semiconductor Devices and Methods for Manufacturing the Same Public/Granted day:2019-08-15
Information query
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