Invention Grant
- Patent Title: Semiconductor apparatus including uncrowned and crowned cells and method of making
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Application No.: US16658787Application Date: 2019-10-21
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Publication No.: US10943046B2Publication Date: 2021-03-09
- Inventor: Prasenjit Ray , Lee-Chung Lu , Meng-Kai Hsu , Wen-Hao Chen , Yuan-Te Hou
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: G06F30/398
- IPC: G06F30/398 ; G06F30/394 ; H01L27/02 ; H01L23/52 ; H01L23/522 ; G06F30/39

Abstract:
A semiconductor apparatus includes a first cell having a first interconnect structure and a second cell having a second interconnect structure. The semiconductor apparatus further includes a first plurality of conductive segments, wherein each conductive segment of the first plurality of conductive segments directly connects a first metal level of the first interconnect structure to a first metal level of the second interconnect structure. The semiconductor apparatus further includes a third cell having a third interconnect structure and a fourth cell having a fourth interconnect structure. The semiconductor apparatus further includes a second plurality of conductive segments, wherein each conductive segment of the second plurality of conductive segments directly connects a second metal level of the third interconnect structure to a second metal level of the fourth interconnect structure, and the second metal level is different from the first metal level.
Public/Granted literature
- US20200050733A1 SEMICONDUCTOR APPARATUS INCLUDING UNCROWNED AND CROWNED CELLS AND METHOD OF MAKING Public/Granted day:2020-02-13
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