Invention Grant
- Patent Title: Changing of error correction codes based on the wear of a memory sub-system
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Application No.: US16228632Application Date: 2018-12-20
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Publication No.: US10942809B2Publication Date: 2021-03-09
- Inventor: Tingjun Xie , Ying Yu Tai , Jiangli Zhu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Lowenstein Sandler LLP
- Main IPC: G06F11/00
- IPC: G06F11/00 ; G06F11/10 ; G06F3/06
Abstract:
Data to be stored at a memory sub-system can be received. A usage characteristic of the memory sub-system can be determined. The received data can be encoded to generate a codeword with a number of parity bits. A portion of the number of parity bits of the generated codeword can be removed based on the usage characteristic of the memory sub-system. Furthermore, the codeword can be stored without the removed portion of the number of parity bits.
Information query
