Invention Grant
- Patent Title: Magnetoresistive effect element
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Application No.: US16676920Application Date: 2019-11-07
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Publication No.: US10937954B2Publication Date: 2021-03-02
- Inventor: Kazuumi Inubushi , Katsuyuki Nakada
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JPJP2017-040527 20170303
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L43/10 ; H01F10/32 ; H01L43/02 ; H01L43/08

Abstract:
A magnetoresistive effect element includes a first ferromagnetic layer, a second ferromagnetic layer, a nonmagnetic layer, and at least one of a first nonmagnetic insertion layer provided directly on a lower surface of the nonmagnetic layer and a second nonmagnetic insertion layer provided directly on an upper surface of the nonmagnetic layer. The first nonmagnetic insertion layer and the second nonmagnetic insertion layer include an Ag alloy represented by General Formula (1): AgγX1-γ where X indicates one element selected from the group consisting of Al, Cu, Ga, Ge, As, Y, La, Sm, Yb, and Pt, and 0
Public/Granted literature
- US20200075845A1 MAGNETORESISTIVE EFFECT ELEMENT Public/Granted day:2020-03-05
Information query
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