Invention Grant
- Patent Title: Semiconductor devices including stress-inducing layers and methods of forming the same
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Application No.: US16184153Application Date: 2018-11-08
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Publication No.: US10937952B2Publication Date: 2021-03-02
- Inventor: Dong Kyu Lee , Young Hyun Kim , Jung Hwan Park , Jung Min Lee , Kyung Ii Hong
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2018-0073291 20180626
- Main IPC: H01L43/10
- IPC: H01L43/10 ; H01L27/22 ; H01L43/02 ; H01L43/08
Abstract:
A semiconductor device includes a first electrode disposed on a substrate, a magnetic tunnel junction (MTJ) on the first electrode, a capping layer on the MTJ, a stress-inducing layer on the capping layer, and a second electrode on the stress-inducing layer. The stress-inducing layer may have tensile stress.
Public/Granted literature
- US20190393410A1 SEMICONDUCTOR DEVICES INCLUDING STRESS-INDUCING LAYERS AND METHODS OF FORMING THE SAME Public/Granted day:2019-12-26
Information query
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