Invention Grant
- Patent Title: Void formation for charge trap structures
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Application No.: US16452292Application Date: 2019-06-25
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Publication No.: US10937802B2Publication Date: 2021-03-02
- Inventor: Chris M. Carlson
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L21/28 ; H01L27/1157 ; H01L29/51 ; H01L29/423

Abstract:
Various embodiments include methods and apparatus having a number of charge trap structures, where each charge trap structure includes a dielectric barrier between a gate and a blocking dielectric region, the blocking dielectric region located on a charge trap region of the charge trap structure. At least a portion of the gate can be separated by a void from a region which the charge trap structure is directly disposed. Additional apparatus, systems, and methods are disclosed.
Public/Granted literature
- US20190312058A1 VOID FORMATION FOR CHARGE TRAP STRUCTURES Public/Granted day:2019-10-10
Information query
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