Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16476503Application Date: 2017-04-25
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Publication No.: US10937733B2Publication Date: 2021-03-02
- Inventor: Takeshi Miura
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2017/016385 WO 20170425
- International Announcement: WO2018/198199 WO 20181101
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/00 ; H01L23/522 ; H01L23/532

Abstract:
An insulating film (2) is provided on a base material (1). The insulating film (2) is a compressive film in which a stress is applied in a direction of peeling away from the base material at a central portion. A recess (3) is formed in the central portion of the insulating film (2) so that a thickness is partially reduced.
Public/Granted literature
- US20200051910A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-02-13
Information query
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