Disclosed is a semiconductor device comprising a substrate, a first dielectric layer and a second dielectric layer that are sequentially stacked on the substrate, a contact that penetrates the first dielectric layer and extends toward the substrate, and a conductive line that is provided in the second dielectric layer and electrically connected to the contact, The conductive line extends in a first direction. The contact comprises a lower segment in the first dielectric layer and an upper segment in the second dielectric layer. A width in a second direction of the conductive line decreases with decreasing distance from the substrate. The second direction intersects the first direction. A sidewall of the upper segment of the contact is in contact with the conductive line.