Invention Grant
- Patent Title: Eutectic electrode structure of flip-chip LED chip and flip-chip LED chip
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Application No.: US16900538Application Date: 2020-06-12
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Publication No.: US10916688B2Publication Date: 2021-02-09
- Inventor: Anhe He , Suhui Lin , Jiansen Zheng , Kangwei Peng , Xiaoxiong Lin , Chenke Hsu
- Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Applicant Address: CN Xiamen
- Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Xiamen
- Agency: Syncoda LLC
- Agent Feng Ma
- Priority: CN201510655970 20151013
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L21/00 ; H01L33/62 ; H01L23/00 ; H01L33/40

Abstract:
A light emitting diode includes: a light emitting structure including a first semiconductor layer, a light emitting layer, a second semiconductor layer; a first metal layer arranged on at least a portion of the first semiconductor layer and in contact with the first semiconductor layer; and an electrode layer arranged over the light emitting structure, and having a first electrode layer and a second electrode layer. The first electrode layer is electrically coupled to the first and second semiconductor layers; the second electrode layer is configured for bonding with a package substrate, and includes a first and second bonding regions; the first bonding region is electrically coupled to the first semiconductor layer; the second bonding region is electrically coupled to the second semiconductor layer; and the first metal layer is not overlapped with the first bonding region of the second bonding region in a vertical direction.
Public/Granted literature
- US20200313059A1 Eutectic Electrode Structure of Flip-chip LED Chip and Flip-chip LED Chip Public/Granted day:2020-10-01
Information query
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