Invention Grant
- Patent Title: Method of forming gate
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Application No.: US16276642Application Date: 2019-02-15
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Publication No.: US10916636B2Publication Date: 2021-02-09
- Inventor: Po-Tsang Chen , Wen-Liang Huang , Chun-Chi Yu
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/28 ; H01L21/027 ; H01L29/49
Abstract:
A method of forming gates includes the following steps. Dummy gates are formed on a substrate. A spacer material is deposited to conformally cover the dummy gates. A removing process is performed to remove parts of the spacer material and the dummy gates, thereby forming spacers and recesses in the spacers.
Public/Granted literature
- US20200266285A1 METHOD OF FORMING GATE Public/Granted day:2020-08-20
Information query
IPC分类:
