Invention Grant
- Patent Title: Semiconductor device and method for manufacturing same
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Application No.: US16143300Application Date: 2018-09-26
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Publication No.: US10916522B2Publication Date: 2021-02-09
- Inventor: Daisuke Fukamachi
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan
- Agency: Foley & Lardner LLP
- Priority: JP2017-186081 20170927
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/495 ; H01L33/62

Abstract:
A method for manufacturing a semiconductor device includes: a first bonding process including bonding, at a first bonding point, a tip of a wire held by a capillary; a first lifting process including moving the capillary upward; a first reverse process including moving the capillary in a direction that includes a component in a first direction that is from a second bonding point toward the first bonding point; a second lifting process including moving the capillary upward; a second reverse process including moving the capillary in the first direction; a third lifting process including moving the capillary upward; a forward process including moving the capillary toward the second bonding point; and a second bonding process including bonding the wire at the second bonding point. A movement distance of the capillary in the first lifting process is not less than a movement distance of the capillary in the second lifting process.
Public/Granted literature
- US20190096847A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2019-03-28
Information query
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