Invention Grant
- Patent Title: Systems and methods using an RF circuit on isolating material
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Application No.: US16456266Application Date: 2019-06-28
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Publication No.: US10916515B2Publication Date: 2021-02-09
- Inventor: Carsten Ahrens , Anton Steltenpohl , Edward Fuergut , Anneliese Mueller
- Applicant: Infineon Techologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Techologies AG
- Current Assignee: Infineon Techologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L23/66
- IPC: H01L23/66 ; H01L21/66 ; H01L23/552 ; H01L21/683 ; H01L23/31 ; H01L23/00 ; H01L23/522 ; H01L23/64
Abstract:
A device is disclosed that includes a wafer/chip, a first layer, a first device, an isolation mold and a second device. The first layer is formed over the chip and has non-isolating characteristics. The first device is formed over the first layer. In one example, it is formed only over the first layer. The isolation mold is formed over the chip. The isolation mold has isolating characteristics. The second device is formed substantially over the isolation mold.
Public/Granted literature
- US20200006262A1 SYSTEMS AND METHODS USING AN RF CIRCUIT ON ISOLATING MATERIAL Public/Granted day:2020-01-02
Information query
IPC分类:
