Invention Grant
- Patent Title: Method for manufacturing semiconductor device
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Application No.: US16586584Application Date: 2019-09-27
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Publication No.: US10916444B2Publication Date: 2021-02-09
- Inventor: Katsumi Nakamura
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Main IPC: H01L21/322
- IPC: H01L21/322 ; H01L29/66 ; H01L29/32 ; H01L29/739 ; H01L29/40 ; H01L29/861 ; H01L29/06 ; H01L21/324 ; H01L29/08
Abstract:
A semiconductor device of the present invention includes a substrate having a drift layer, metal wiring formed on an upper surface of the substrate, and an electrode formed on a back surface of the substrate, wherein the lifetime of carriers in the drift layer satisfies the following expression 1:
[Expression 1] τ≥1.5×10−5 exp(5.4×103tN−) expression 1 τ: the lifetime of carriers in the drift layer tN−: the layer thickness of the drift layer.
[Expression 1] τ≥1.5×10−5 exp(5.4×103tN−) expression 1 τ: the lifetime of carriers in the drift layer tN−: the layer thickness of the drift layer.
Public/Granted literature
- US10950461B2 Method for manufacturing semiconductor device Public/Granted day:2021-03-16
Information query
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