Invention Grant
- Patent Title: Semiconductor structure and manufacturing method thereof
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Application No.: US16684564Application Date: 2019-11-14
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Publication No.: US10916296B2Publication Date: 2021-02-09
- Inventor: Xiaojun Zhou
- Applicant: Shanghai Huali Integrated Circuit Mfg. Co., Ltd.
- Applicant Address: CN Shanghai
- Assignee: Shanghai Huali Integrated Circuit Mfg. Co., Ltd.
- Current Assignee: Shanghai Huali Integrated Circuit Mfg. Co., Ltd.
- Current Assignee Address: CN Shanghai
- Agency: Kilpatrick Townsend & Stockton, LLP
- Priority: CN201811637818 20181229
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/412 ; H01L27/11 ; G11C11/419

Abstract:
The present disclosure provides a semiconductor structure and a method of fabricating the same, the semiconductor structure being a dual port static random access memory cell, the memory cell comprising a plurality of transistors, the plurality of transistors including a first pull-down transistor and a second pull-down transistor, the first pull-down transistor includes a plurality of first pull-down sub-transistors connected in parallel, the second pull-down transistor includes a plurality of second pull-down sub-transistors connected in parallel, plurality of gates of the plurality of first pull-down sub-transistors are parallel to each other, plurality of gates of the plurality of second pull-down sub-transistors are parallel to each other.
Public/Granted literature
- US20200211637A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2020-07-02
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