Invention Grant
- Patent Title: High power radio frequency switches with low leakage current and low insertion loss
-
Application No.: US16532932Application Date: 2019-08-06
-
Publication No.: US10911040B2Publication Date: 2021-02-02
- Inventor: Yusuf Atesal , Abdullah Celik
- Applicant: Analog Devices International Unlimited Company
- Applicant Address: IE County Limerick
- Assignee: Analog Devices International Unlimited Company
- Current Assignee: Analog Devices International Unlimited Company
- Current Assignee Address: IE County Limerick
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Main IPC: H03K17/687
- IPC: H03K17/687 ; H03K17/06

Abstract:
High power radio frequency (RF) switches with low leakage current and low insertion loss are provided. In one embodiment, an RF switch includes a plurality of transistors and is configured to selectively connect one of a transmit path or a receive path to an antenna. All of the transistors are configured to be in an on state when the RF switch operates in a high power mode and all of the transistors are configured to be in an off state when the RF switch operates in a low power mode.
Public/Granted literature
- US20200343884A1 HIGH POWER RADIO FREQUENCY SWITCHES WITH LOW LEAKAGE CURRENT AND LOW INSERTION LOSS Public/Granted day:2020-10-29
Information query
IPC分类: