Invention Grant
- Patent Title: Low modulation-voltage cryogenic diode structure
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Application No.: US16659526Application Date: 2019-10-21
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Publication No.: US10910793B2Publication Date: 2021-02-02
- Inventor: Daniel Yap , Rongming Chu , Andrew Pan
- Applicant: HRL Laboratories, LLC
- Applicant Address: US CA Malibu
- Assignee: HRL Laboratories, LLC
- Current Assignee: HRL Laboratories, LLC
- Current Assignee Address: US CA Malibu
- Agency: Ladas & Parry
- Main IPC: H01S5/30
- IPC: H01S5/30 ; H01S5/187 ; H01S5/34

Abstract:
A laser or light emitter for operation at a cryogenic temperature includes a single quantum well layer, an n-type barrier layer directly on a first surface of the single quantum well layer, and a p-type barrier layer directly on a second surface of the single quantum well layer opposite the first surface of the single quantum well layer. The single quantum well layer is between the p-type barrier layer and the n-type barrier layer and the compositions of the n-type barrier layer and the p-type barrier layer are graded.
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