An optoelectronic component is disclosed. In an embodiment, an optoelectronic component includes a semiconductor chip configured to emit primary radiation having a peak wavelength between 420 nm inclusive and 480 nm inclusive and a conversion element including a first converter material configured to partially convert the primary radiation into secondary radiation in a green range of the electromagnetic spectrum and a second converter material configured to partially convert the primary radiation into a secondary radiation in a red region of the electromagnetic spectrum, wherein the second converter material including a first red phosphor of the formula (K,Na)2(Si,Ti)F6:Mn4+ and a second red phosphor of the formula(M′)2-x′Eux′Si2Al2N6 where M′=Sr, Ca, Ba, and/or Mg and 0.001≤x′≤0.2, and wherein the optoelectronic device is configured to emit white total radiation.