Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16458670Application Date: 2019-07-01
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Publication No.: US10910489B2Publication Date: 2021-02-02
- Inventor: Masaaki Onomura
- Applicant: Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
- Applicant Address: JP Minato-ku; JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee Address: JP Minato-ku; JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2019-041385 20190307
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/15 ; H01L29/20 ; H01L29/205 ; H01L29/423 ; H01L21/02 ; H01L29/66
Abstract:
A semiconductor device according to an embodiment includes: a substrate; a first nitride semiconductor layer that is provided above the substrate, has a first lattice period in a first direction parallel to a substrate plane, and includes nitrogen and aluminum; a second nitride semiconductor layer that is provided between the substrate and the first nitride semiconductor layer and includes nitrogen and aluminum and of which at least a portion has a second lattice period that is three times the first lattice period in the first direction parallel to the substrate plane; a third nitride semiconductor layer provided above the first nitride semiconductor layer; a fourth nitride semiconductor layer that is provided on the third nitride semiconductor layer and has a larger bandgap than the third nitride semiconductor layer; at least one main electrode provided on the fourth nitride semiconductor layer; and a control electrode provided above the third nitride semiconductor layer, the control electrode being configured to control a current of the semiconductor device.
Public/Granted literature
- US20200287035A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-09-10
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