Invention Grant
- Patent Title: Semiconductor device with conducting structure for reducing parasitic capacitance and improving RC delay
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Application No.: US16435102Application Date: 2019-06-07
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Publication No.: US10910469B2Publication Date: 2021-02-02
- Inventor: Wen-Hua Wen , Chia-Shen Liu , Wen-Chung Chen , Chrong-Jung Lin
- Applicant: Vanguard International Semiconductor Corporation
- Applicant Address: TW Hsinchu
- Assignee: Vanguard International Semiconductor Corporation
- Current Assignee: Vanguard International Semiconductor Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/762 ; H01L29/423 ; H01L29/08 ; H01L29/78
Abstract:
A semiconductor device includes a substrate and a conducting structure. The substrate has a first conductivity type and includes a first isolation region, a first implant region, and a second implant region. The first isolation region is disposed along the circumference of the substrate. The first implant region has the first conductivity type, and the second implant region has a second conductivity type that is the opposite of the first conductivity type. The conducting structure is disposed on the substrate, and at least a portion of the conducting structure is located on the first isolation region.
Information query
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