Invention Grant
- Patent Title: Semiconductor memory device
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Application No.: US16654794Application Date: 2019-10-16
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Publication No.: US10910392B2Publication Date: 2021-02-02
- Inventor: Mikiko Mori , Ryota Suzuki , Tatsuya Kato , Wataru Sakamoto , Fumie Kikushima
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Minato-ku
- Assignee: Toshiba Memory Corporation
- Current Assignee: Toshiba Memory Corporation
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01L27/11556
- IPC: H01L27/11556 ; H01L27/11524 ; H01L27/11529
Abstract:
A semiconductor device according to an embodiment includes two semiconductor pillars, a connection member connected between the two semiconductor pillars, and a contact connected to the connection member. There is not a conductive member disposed between the two semiconductor pillars.
Public/Granted literature
- US20200051991A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2020-02-13
Information query
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