Invention Grant
- Patent Title: Substrate treatment method
-
Application No.: US16065462Application Date: 2016-11-21
-
Publication No.: US10910229B2Publication Date: 2021-02-02
- Inventor: Koichi Nagakura , Tamotsu Morimoto , Shuichiro Uda , Takeshi Saito
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer
- Priority: JP2015-253439 20151225
- International Application: PCT/JP2016/084379 WO 20161121
- International Announcement: WO2017/110335 WO 20170629
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H05H1/46 ; H01L21/02 ; H01L21/28 ; H01L21/311 ; H01L21/3105 ; H01L29/78
Abstract:
A method capable of increasing a degree of freedom of process conditions that can be set in a plasma treatment while limiting deterioration in the electrical characteristics of a silicon or metal oxide film exposed to plasma, in performing the plasma treatment on a substrate. The method includes: processing a substrate on which a silicon or metal oxide film is formed, with plasma obtained by plasmarizing a process gas composed of a halogen compound; and subsequently, heating the substrate at a temperature of 450 degrees C. or higher in an inert gas atmosphere or a vacuum atmosphere in a state where the metal oxide film exposed to the plasma is exposed. Thus, deterioration in the characteristics of the oxide film caused by the plasma treatment are restored.
Public/Granted literature
- US20180366334A1 SUBSTRATE TREATMENT METHOD Public/Granted day:2018-12-20
Information query
IPC分类:
