Invention Grant
- Patent Title: Ion source, ion implantation apparatus, and ion source operating method
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Application No.: US16639184Application Date: 2018-08-10
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Publication No.: US10910192B2Publication Date: 2021-02-02
- Inventor: Akio Higashi , Naruyasu Sasaki , Toshihiro Terasawa
- Applicant: ULVAC, INC.
- Applicant Address: JP Chigasaki
- Assignee: ULVAC, INC.
- Current Assignee: ULVAC, INC.
- Current Assignee Address: JP Chigasaki
- Agency: Oliff PLC
- Priority: JP2017-176451 20170914
- International Application: PCT/JP2018/030048 WO 20180810
- International Announcement: WO2019/054111 WO 20190321
- Main IPC: H01J37/08
- IPC: H01J37/08 ; H01J37/317 ; C23C14/48 ; H01J37/16

Abstract:
An ion source includes a vacuum chamber having a cooling mechanism, an ion generation container for reacting an ionized gas with an ion material so as to generate ions, an extraction electrode for extracting ions generated in the ion generation container and generating an ion beam, and a shielding member provided inside and in the vicinity of an inner wall of the vacuum chamber, and having a main body made of a conductive metal for blocking deposition of an insulating material on the inner wall (10d) of the vacuum chamber. The main body of the shielding member has a plurality of protruding support portions that is in contact with the inner wall of the vacuum chamber for supporting the main body in a manner such that the main body is fitted at a distance from the inner wall of the vacuum chamber.
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