Invention Grant
- Patent Title: Radio-frequency switch with voltage equalization
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Application No.: US16832404Application Date: 2020-03-27
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Publication No.: US10903836B2Publication Date: 2021-01-26
- Inventor: Byeong Hak Jo , Yoo Sam Na , Hyun Paek , Sol A Kim , Jeong Hoon Kim , Jong Mo Lim
- Applicant: Samsung Electro-Mechanics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: KR10-2019-0072027 20190618
- Main IPC: H04B1/04
- IPC: H04B1/04 ; H04B1/44 ; H03K17/687 ; H03K17/693

Abstract:
A radio-frequency switch includes a first series switch including a plurality of series field-effect transistors (FETs) connected in series between a first terminal and a second terminal, a first shunt switch including a plurality of shunt FETs connected in series between the first terminal and a first ground terminal, and a first shunt gate resistor circuit including a plurality of gate resistors respectively connected to gates of the plurality of shunt FETs of the first shunt switch. Respective resistance values of the plurality of gate resistors of the first shunt gate resistor circuit successively increase in a direction away from the first ground terminal toward the first terminal.
Information query