Invention Grant
- Patent Title: High frequency switch
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Application No.: US16777123Application Date: 2020-01-30
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Publication No.: US10903835B2Publication Date: 2021-01-26
- Inventor: Kenta Seki
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Kyoto
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Pearne & Gordon LLP
- Priority: JP2017-148755 20170801
- Main IPC: H03K17/693
- IPC: H03K17/693 ; H04B1/48

Abstract:
A length of a zone in which a power propagation direction from an input/output terminal (P251) toward a common terminal (P20) and a power propagation direction from the common terminal (P20) toward an external connection terminal (P10) are opposite to each other is longer than a length of a zone in which a power propagation direction from an input/output terminal (P211) toward the common terminal (P20) and a power propagation direction from the common terminal (P20) toward the external connection terminal (P10) are opposite to each other. A FET (251) and a FET (211) have structures that power transferred between a drain and a source of the FET (251) in accordance with predetermined input power is greater than power transferred between a drain and a source of the FET (211).
Public/Granted literature
- US20200169256A1 HIGH FREQUENCY SWITCH Public/Granted day:2020-05-28
Information query
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