Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16794694Application Date: 2020-02-19
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Publication No.: US10903367B2Publication Date: 2021-01-26
- Inventor: Yoshinari Higaki , Masayuki Sakakura , Shunpei Yamazaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Husch Blackwell LLP
- Priority: JP2004-267673 20040915
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/12 ; H01L29/45 ; H01L29/49 ; H01L29/417 ; G02F1/1368 ; H01L27/32

Abstract:
It is an object of the present invention to connect a wiring, an electrode, or the like formed with two incompatible films (an ITO film and an aluminum film) without increasing the cross-sectional area of the wiring and to achieve lower power consumption even when the screen size becomes larger. The present invention provides a two-layer structure including an upper layer and a lower layer having a larger width than the upper layer. A first conductive layer is formed with Ti or Mo, and a second conductive layer is formed with aluminum (pure aluminum) having low electric resistance over the first conductive layer. A part of the lower layer projected from the end section of the upper layer is bonded with ITO.
Public/Granted literature
- US20200185534A1 Semiconductor Device Public/Granted day:2020-06-11
Information query
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