Invention Grant
- Patent Title: Semiconductor device with asymmetric strained source/drain structure and fabrication method
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Application No.: US16260158Application Date: 2019-01-29
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Publication No.: US10903362B2Publication Date: 2021-01-26
- Inventor: Po-Yu Yang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201910030933 20190114
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/08 ; H01L21/033 ; H01L21/324 ; H01L21/225 ; H01L21/306 ; H01L29/10
Abstract:
A semiconductor device includes a substrate having an upper surface; a source region in the substrate; a drain region in the substrate and spaced apart from the source region; a channel region between the source region and the drain region; a gate structure on the channel region; m dislocations in the source region, wherein m is an integer greater than or equal to 1; and n dislocations in the drain region, wherein n is an integer greater than or equal to 0, and wherein m is greater than n.
Public/Granted literature
- US20200227554A1 SEMICONDUCTOR DEVICE WITH ASYMMETRIC STRAINED SOURCE/DRAIN STRUCTURE AND FABRICATION METHOD Public/Granted day:2020-07-16
Information query
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