Invention Grant
- Patent Title: Semiconductor devices and methods for forming the same
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Application No.: US16281978Application Date: 2019-02-21
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Publication No.: US10903350B2Publication Date: 2021-01-26
- Inventor: Cheng-Wei Chou , Hsin-Chih Lin , Yu-Chieh Chou
- Applicant: Vanguard International Semiconductor Corporation
- Applicant Address: TW Hsinchu
- Assignee: Vanguard International Semiconductor Corporation
- Current Assignee: Vanguard International Semiconductor Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/20 ; H01L29/40 ; H01L29/66
Abstract:
A semiconductor device includes a first composite III-V group compound semiconductor layer disposed on a composite substrate, and a second III-V group compound semiconductor layer disposed on the first composite III-V group compound semiconductor layer. The semiconductor device also includes a gate structure disposed on the second III-V group compound semiconductor layer, and a source electrode and a drain electrode disposed on the second III-V group compound semiconductor layer and at opposite sides of the gate structure. The semiconductor device further includes a field plate disposed between the gate structure and the drain electrode, and a conductive structure penetrating through the second III-V group compound semiconductor layer and the first composite III-V group compound semiconductor layer, wherein the field plate is electrically connected to the composite substrate through the conductive structure.
Public/Granted literature
- US20200273976A1 SEMICONDUCTOR DEVICES AND METHODS FOR FORMING THE SAME Public/Granted day:2020-08-27
Information query
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