Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16774917Application Date: 2020-01-28
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Publication No.: US10903343B2Publication Date: 2021-01-26
- Inventor: Atsushi Kurokawa
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Kyoto-fu
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Kyoto-fu
- Agency: Studebaker & Brackett PC
- Priority: JP2017-149448 20170801
- Main IPC: H01L29/737
- IPC: H01L29/737 ; H01L29/08 ; H01L29/417 ; H01L21/768 ; H01L23/522 ; H01L21/3205
Abstract:
A semiconductor device includes an HBT; emitter wiring which is connected to an emitter electrode of the HBT and covers the HBT; a passivation film having an opening on the HBT in plan view; a UBM layer which is connected to the emitter wiring through the opening and made of a refractory metal with a thickness of 300 nm or more; and a pillar bump which is arranged on the UBM layer and includes a metal post and a solder layer. The UBM layer serves as a stress relaxation layer, thereby relaxing stress on the HBT due to a difference in thermal expansion coefficient between a GaAs-based material of each layer constituting the HBT and the pillar bump.
Public/Granted literature
- US20200168726A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-05-28
Information query
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