Invention Grant
- Patent Title: Capacitor structure and semiconductor device including the same
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Application No.: US16787426Application Date: 2020-02-11
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Publication No.: US10903310B2Publication Date: 2021-01-26
- Inventor: Jong-Min Lee , Hyongsoo Kim , Jongryul Jun
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2015-0084206 20150615
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L27/108

Abstract:
A capacitor structure includes a plurality of bottom electrodes horizontally spaced apart from each other, a support structure covering sidewalls of the bottom electrodes, a top electrode surrounding the support structure and the bottom electrodes, and a dielectric layer interposed between the support structure and the top electrode, and between the top electrode and each of the bottom electrodes. An uppermost surface of the support structure is positioned at a higher level than an uppermost surface of each of the bottom electrodes.
Public/Granted literature
- US20200176556A1 CAPACITOR STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME Public/Granted day:2020-06-04
Information query
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