A magnetic memory device includes a first dielectric layer on a substrate, first and second via plugs in the first dielectric layer, first and second cylindrical memory stacks on the first and second via plugs, respectively, and an insulating cap layer conformally disposed on the first dielectric layer and on sidewalls of the first and second cylindrical memory stacks. The insulating cap layer is not disposed in a logic area and a via forming region between the first and second cylindrical memory stacks.