Invention Grant
- Patent Title: Semiconductor memory device and manufacturing method of semiconductor memory device
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Application No.: US16275378Application Date: 2019-02-14
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Publication No.: US10903233B2Publication Date: 2021-01-26
- Inventor: Hiroshi Nakaki
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Minato-ku
- Assignee: Toshiba Memory Corporation
- Current Assignee: Toshiba Memory Corporation
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2018-166072 20180905
- Main IPC: H01L27/115
- IPC: H01L27/115 ; H01L27/11582 ; H01L27/1157 ; H01L21/02 ; H01L21/3215 ; H01L21/3213 ; H01L21/311 ; H01L21/28
Abstract:
A semiconductor device according to an embodiment includes first conductors, a second conductor, a first semiconductor, a multi-layered body, and a third conductor. The second conductor is provided above the first conductors. The multi-layered body is provided between the first semiconductor and the first conductors, and between the first semiconductor and the second conductor. The third conductor is provided between the multi-layered body and the second conductor. The first semiconductor includes a first portion facing an uppermost first conductor and a second portion facing the second conductor. The first semiconductor is continuous at least from the first portion to the second portion.
Public/Granted literature
- US20200075621A1 SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2020-03-05
Information query
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