Examples of the present disclosure provide power gating for stacked die structures. In some examples, a stacked die structure comprises a first die and a second die bonded to the first die. In some examples, a power gated power path is from a bonding interface between the dies through TSVs in the second die, a power gating device in the second die, and routing of metallization layers in the second die to the circuit region in the second die. In some examples, a power gated power path comprises a power gating device in a power gating region of the first die and is configured to interrupt a flow of current through the power gated power path to a circuit region in the second die.